Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Bipolar transistorDescription: SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44Pin TSOP-II Tube699510+$8.7204100+$8.2844500+$7.99371000+$7.97922000+$7.92105000+$7.84847500+$7.790210000+$7.7612 -
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia4401 -
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia8692 -
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Category: Bipolar transistorDescription: 低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia5845 -
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Category: Bipolar transistorDescription: 低饱和电压双 NPN/PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压双 NPN/PNP 双极结点晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia5210 -
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Category: Bipolar transistorDescription: 低饱和电压 NPN 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia4373
